RN1709JE(TE85L,F)

RN1709JE(TE85L,F)

Mtengenezaji

Toshiba Electronic Devices and Storage Corporation

Aina ya Bidhaa

transistors - bipolar (bjt) - safu, kabla ya upendeleo

Maelezo

NPN X 2 BRT, Q1BSR=47KΩ, Q1BER=2

Barua pepe ya RFQ: [email protected] or Inauliza mtandaoni

Vipimo

  • mfululizo
    -
  • kifurushi
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • hali ya sehemu
    Active
  • aina ya transistor
    2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • sasa - mtoza (ic) (max)
    100mA
  • mgawanyiko wa mtozaji wa mtozaji wa voltage (max)
    50V
  • upinzani - msingi (r1)
    47kOhms
  • upinzani - msingi wa emitter (r2)
    22kOhms
  • dc current gain (hfe) (min) @ ic, vce
    70 @ 10mA, 5V
  • vce kueneza (max) @ ib, ic
    300mV @ 250µA, 5mA
  • sasa - kata ya mtoza (max)
    500nA
  • mzunguko - mpito
    250MHz
  • nguvu - max
    100mW
  • aina ya ufungaji
    Surface Mount
  • kifurushi / kesi
    SOT-553
  • kifurushi cha kifaa cha wasambazaji
    ESV

RN1709JE(TE85L,F) Omba Nukuu

Katika Hisa 25235
Kiasi:
Bei ya Kitengo (Bei ya Marejeleo):
0.41000
Bei inayolengwa:
Jumla:0.41000