BS2130F-GE2

BS2130F-GE2

Mtengenezaji

ROHM Semiconductor

Aina ya Bidhaa

pmic - kamili, madereva ya daraja la nusu

Maelezo

600V HIGH VOLTAGE 3 PHASE BRIDGE

Barua pepe ya RFQ: [email protected] or Inauliza mtandaoni

Vipimo

  • mfululizo
    -
  • kifurushi
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • hali ya sehemu
    Active
  • usanidi wa pato
    Half Bridge (3)
  • maombi
    General Purpose
  • kiolesura
    Logic
  • aina ya mzigo
    Inductive, Capacitive
  • teknolojia
    Power MOSFET, IGBT
  • rds kwenye (type)
    -
  • sasa - pato / channel
    350mA
  • sasa - pato la kilele
    -
  • voltage - ugavi
    11.5V ~ 20V
  • voltage - mzigo
    600V (Max)
  • joto la uendeshaji
    -40°C ~ 125°C (TA)
  • vipengele
    Bootstrap Circuit
  • ulinzi wa makosa
    Current Limiting, UVLO
  • aina ya ufungaji
    Surface Mount
  • kifurushi / kesi
    28-SOIC (0.295", 7.50mm Width)
  • kifurushi cha kifaa cha wasambazaji
    28-SOP

BS2130F-GE2 Omba Nukuu

Katika Hisa 9600
Kiasi:
Bei ya Kitengo (Bei ya Marejeleo):
3.48000
Bei inayolengwa:
Jumla:3.48000

Karatasi ya data