RN2910,LF(CT

RN2910,LF(CT

Mtengenezaji

Toshiba Electronic Devices and Storage Corporation

Aina ya Bidhaa

transistors - bipolar (bjt) - safu, kabla ya upendeleo

Maelezo

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

Barua pepe ya RFQ: [email protected] or Inauliza mtandaoni

Vipimo

  • mfululizo
    -
  • kifurushi
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • hali ya sehemu
    Active
  • aina ya transistor
    2 PNP - Pre-Biased (Dual)
  • sasa - mtoza (ic) (max)
    100mA
  • mgawanyiko wa mtozaji wa mtozaji wa voltage (max)
    50V
  • upinzani - msingi (r1)
    4.7kOhms
  • upinzani - msingi wa emitter (r2)
    -
  • dc current gain (hfe) (min) @ ic, vce
    120 @ 1mA, 5V
  • vce kueneza (max) @ ib, ic
    300mV @ 250µA, 5mA
  • sasa - kata ya mtoza (max)
    100nA (ICBO)
  • mzunguko - mpito
    200MHz
  • nguvu - max
    200mW
  • aina ya ufungaji
    Surface Mount
  • kifurushi / kesi
    SC-61AA
  • kifurushi cha kifaa cha wasambazaji
    SMQ

RN2910,LF(CT Omba Nukuu

Katika Hisa 206067
Kiasi:
Bei ya Kitengo (Bei ya Marejeleo):
0.04876
Bei inayolengwa:
Jumla:0.04876